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Dislocation Trapping Potential Measured by SEM-CCM

Published online by Cambridge University Press:  28 February 2011

Sam Mil'Shtein
Sam Mil'Shtein*
Affiliation:
Solid State Science Group, Cabot Corporation, Concord Road, Billerica, Massachusetts, 01821
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Abstract

The intensity of contrast and width of the image of a single dislocation in silicon were measured versus bias of Schottky barrier at room temperature. A regime of measurements was established, which reduced dramatically the number of variable parameters involved in contrast formation. In addition, using the right regime of SEM-CCM one can determine the position of a defect relative to the surface of the specimen without doing TEM measurements. It was shown for the first time that from contrast readout one can determine the dislocation electrical potential. A model of image formation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 487
Copyright
Copyright © Materials Research Society 1985

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References

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