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Discrete Metal Deposition on Hydrogen Terminated Silicon Surfaces: Kinetics, Morphologies and Sensor Applications

Published online by Cambridge University Press:  10 February 2011

Oliver Chyan ,
Jin-Jian Chen ,
Junjun Wu ,
Steve Chien  and
Min Liu
Oliver Chyan
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203, E-mail: [email protected]
Jin-Jian Chen
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
Junjun Wu
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
Steve Chien
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
Min Liu
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
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Abstract

The presence of ultra-trace (as low as 1010 – 1013 atoms/cm2) quantities of metal contaminants on silicon substrates is well known to adversely affect the electrical properties of the silicon based microelectronic devices. In this paper, we report our most recent experimental findings on the trace metal deposition mechanisms and its interplays with silicon substrate surface properties at specific chemical environments. The emphases were on the deposition kinetics and morphology, especially at the early stage of metal out-plating process. For instance, our atomic force microscopy results revealed that the Cu deposition on H-Si(100) surface was dominated by nucleation of nanometer-sized Cu nuclei at the initial stage (less than 60 seconds). The growth of the existing Cu nuclei was suppressed for the initial nucleation period until all the nucleation sites were consumed. The number of nucleation sites were found to closely relate to wafer intrinsic properties and solution compositions. A novel sensor which provides direct detection of part-per-trillion level of metal ion impurities in wet cleaning solutions will also be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 267
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. a) Handbook of Semiconductor Wafer Cleaning Technology, Kern, W. ed.; Noyes Publications, Park Ridge, New Jersey, 1993.Google Scholar
b) Kern, W., RCA Review, Part I: 31, 207(1970).; Part II: 31, 234(1970).; Part III: 32, 64(171).Google Scholar
2. Thornton, M.C. and Williams, R. H., Physica Scripta, 41, 1047(1990).Google Scholar
3. Graf, D., Grundner, M., Schulz, R. and Muhlhoff, L., J. Appl. Phys., 68, 5155 (1990).Google Scholar
4. Riley, D., and Carbonell, R., Proc. of The Institute of Enviromental Sciences Ann. Tech, Mtg., pp 224–228, New Orleans, LA(1990).Google Scholar
5. Kern, W., J. Electrochem. Soc, 137, 1887 (1990).Google Scholar
6. Chyan, O.M.R., Wu, J. and Chen, J., submitted for publication in Applied Spectroscopy.Google Scholar
7. Chyan, O.M.R; Chen, J.J.; Chien, H.Y.; Sees, J. and Hall, L.; J. Electrochem Soc, 143, 92 (1996).Google Scholar
8. Bard, A. J. and Faulkner, L. R.; Elecrochemical Methods: Fundamentals and Application,; John Wiley & Sons: New York; 1980; chapter 5.Google Scholar
9 Wiemhofer, H.D. and Cammann, K. in Sensors: A comprehensive Survey; Gopel, W., Hesse, J. and Zemel, J.N., ed.; VCH: Weinheim, 1991, vol. 2, chapter 5.Google Scholar