Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:40:32.819Z Has data issue: false hasContentIssue false

Direct-Write Process for UV-Curable Epoxy Materials by Inkjet Technology

Published online by Cambridge University Press:  11 February 2011

W. Voit
Affiliation:
XaarJet AB, SE-175 26 Järfälla, Sweden Engineering Materials Physics Division, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden
K. V. Rao
Affiliation:
Engineering Materials Physics Division, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden
W. Zapka
Affiliation:
Engineering Materials Physics Division, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden
Get access

Abstract

We demonstrate drop-on-demand inkjet printing technique to be a high throughput method for the patterned deposition of UV-curable epoxy materials. Different multi-nozzle printheads have been used to produce epoxy droplets with controlled volume in the range from 15 to 180 pl, and to apply the droplets with high placement accuracy. For a large dot grid pattern, which was printed by addressing 126 individual ink channels, standard deviations of σx = 2.3 μm and σy = 2.6 μm have been achieved for the error in dot placement. The deposited epoxy dots were found to form planar convex lenses with a focal length of 142 μm. In addition, we have successfully printed magnetic nanoparticles in a carrier fluid with the drop-on-demand printheads, as a step towards the production of composites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhao, X., Evans, J.R.G., Edirisinghe, M.J. and Song, J.H., J. Mater. Sci. 37, 1987 (2002).Google Scholar
2. Hong, C.M., and Wagner, S.: ‘Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors’, IEEE Electron Device Lett., 2000, 21 (8) pp. 384386 Google Scholar
3. Fuller, S.B., Wilhelm, E.J. and Jacobson, J.M., J. Microelectromech. Syst. 11 (1), 54 (2002).Google Scholar
4. Cox, W.R. and Chen, T., Optics & Photonics News 12 (6), 32 (2001).Google Scholar
5. Voit, W., Zimmermann, M., Alsered, M., Rao, K.V. and Zapka, W., The IMAPS Nordic Conference 2002, Stockholm, Sweden, pp. 6470 (2002).Google Scholar
6. Beurer, G. and Kretschmer, J., Proc. IS&T's NIP 13, 621 (1997).Google Scholar
7. Manning, H.J. and Harvey, R.A., R.A., , Proc. IS&T's NIP 15, 35 (1999).Google Scholar
8. Ström, V. and Rao, K.V., J. Vac. Sci. Technol. A 16 (4) 2687 (1998).Google Scholar