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Direct-write Electron Beam Lithography: History and State of the Art

Published online by Cambridge University Press:  10 February 2011

Dustin W. Carr  and
Richard C. Tiberio
Dustin W. Carr
Affiliation:
Currently at Bell Laboratories - Lucent Technologies, 700 Mountain Ave, Murray Hill, NJ 07974
Richard C. Tiberio
Affiliation:
Cornell Nanofabrication Facility, Cornell University, Ithaca, NY 14853
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Abstract

Direct-write electron beam lithography is a patterning technique that has rapidly evolved over the last 40 years. For many years it has been possible to use electrons to pattern lines with widths as narrow as 10 rum. Recent advances in resist materials, electron sources, and system integration have further enhanced the capabilities. High-sensitivity resists provide substantial increases in the throughput without sacrificing resolution. Thermal field-emission sources improve the stability and reduce the minimum attainable spot size. Modem lithography systems integrate the electron beam column with advanced control electronics, making a system capable of nanometer-scale placement accuracy. In addition to these improvements, the technology is more accessible now than ever before, thanks to the proliferation of lithography systems consisting of modified scanning electron microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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