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Direct-Write E-beam Submicron Domain Engineering in LiNbO3 Thin Films Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Ji-Won Son
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Yin Yuen
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Sergei S. Orlov
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Bill Phillips
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Ludwig Galambos
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Vladimir Ya. Shur
Affiliation:
Institute of Physics and Applied Mathematics, Ural State University, Ekaterinburg 620083, Russia
Lambertus Hesselink
Affiliation:
Solid State Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
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Abstract

We demonstrate submicron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO3 thin films grown on LiNbO3 and LiTaO3 substrates using a direct-write electron beam poling for waveguide applications. LiNbO3 thin films of several-micron thickness were grown using a flux melt of 20 mol% LiNbO3-80 mol% LiVO3. To engineer domain structures in Z- oriented LPE LiNbO3 films, a direct-write electron beam poling was implemented. It is shown that we can engineer the domain structure of LPE LiNbO3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are opposite. We also compared e-beam poling behavior in a congruent LiNbO3 single crystal and a LPE LiNbO3 film. Using the same e-beam scan parameters, a much enhanced domain structure is obtained in LPE films. Defect structure and composition effects are also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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