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Directional Deposition of Silicon Oxide by a Plasma Enhanced TEOS Process

Published online by Cambridge University Press:  21 February 2011

J. J. Hsieh ,
D. E. Ibbotson ,
J. A. Mucha  and
D. L. Flamm
J. J. Hsieh
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. E. Ibbotson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. A. Mucha
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. L. Flamm
Affiliation:
Dept. of Electrical Engineering, University of California, Berkeley, CA 94720
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Abstract

We have characterized the step coverage and film quality of (tetraethoxysilane) TEOS-based silicon oxides which are directionally deposited on horizontal surfaces of trench features under oxygen-lean conditions in a high frequency (14 MHz) discharge. The film thickness on the sidewalls depends most strongly on the O2 :TEOS feed ratio. Water uptake after ambient exposure was used as a measure of film quality and the amount of water absorbed in the film correlated well with changes in the refractive index and stress. Oxide quality on horizontal surfaces could be improved by decreasing the TEOS feed or increasing the discharge power, but the sidewall oxide quality could not be improved by these methods. Small NF3 additions to the discharge markedly improved sidewall quality, altered the angle between the sidewall and the bottom of trench features from 90° to ˜115° (tapered profile) and increased the deposition rate, while preserving the directionality of deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 107
Copyright
Copyright © Materials Research Society 1990

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References

1. Chin, B. L. and Ven, E. P. van de, Solid State Technol., p. 119 (April, 1988).Google Scholar
2. Hsieh, J. J., Ibbotson, D. E., Flamm, D. L. and Mucha, J. A., Proc. 6th International IEEE V-MIC Conference (Santa Clara, CA), p. 411 (1989).Google Scholar