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DIRECT OBSERVATION OF INTERFACE TRAPS IN OMVPE-GROWN SELECTIVELY AlGaAs/GaAs HETEROSTRUCTURE USING MODIFIED DLTS

Published online by Cambridge University Press:  28 February 2011

M. TAKIKAWA ,
T. OOHORI ,
K. KASAI ,
J. KOMENO  and
A. SHIBATOMI
M. TAKIKAWA
Affiliation:
FUJITSU LIMITED, FUJITSU LABORATORIES LTD. 10–1, Morinosato-Wakamiya, Atsugi 243–01, Japan
T. OOHORI
Affiliation:
FUJITSU LIMITED, FUJITSU LABORATORIES LTD. 10–1, Morinosato-Wakamiya, Atsugi 243–01, Japan
K. KASAI
Affiliation:
FUJITSU LIMITED, FUJITSU LABORATORIES LTD. 10–1, Morinosato-Wakamiya, Atsugi 243–01, Japan
J. KOMENO
Affiliation:
FUJITSU LIMITED, FUJITSU LABORATORIES LTD. 10–1, Morinosato-Wakamiya, Atsugi 243–01, Japan
A. SHIBATOMI
Affiliation:
FUJITSU LIMITED, FUJITSU LABORATORIES LTD. 10–1, Morinosato-Wakamiya, Atsugi 243–01, Japan
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Abstract

By using a DLTS technique, we measured the drain current transient from a gate bias pulse for a HEMT. Two negative peaks and one positive peak were observed. From the analysis of the spectra, we found that the positive peak was due to the interface trap. The density of the interface trap was determined from a DLTS fitting procedure. The effect of the interface traps on the electrical properties of the heterostructure are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 295
Copyright
Copyright © Materials Research Society 1986

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