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Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

Published online by Cambridge University Press:  01 February 2011

Bentao Cui ,
P. I. Cohen  and
A. M. Dabiran
Bentao Cui
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
P. I. Cohen
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
A. M. Dabiran
Affiliation:
SVT Associates, Inc, Eden Prairie, MN 55344
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Abatract

The formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.37
Copyright
Copyright © Materials Research Society 2005

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