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Direct Electrical Characterization of Metal Induced Lateral Crystallization Regions by Spreading Resistance Probe Measurements

Published online by Cambridge University Press:  01 February 2011

Alexandre M. Myasnikov
Affiliation:
Institute of Semiconductors Physics, Novosibirsk, Russia
Vincent M.C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Vincent T.C. Leung
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Lawrence C.F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
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Abstract

Material characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm2/Vs to 34 cm2/Vs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1. Meng, Z., Wang, M., Wong, M., “High-performance low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications”, IEEE Transactions on Electron Devices, vol.47, no.2, p.404409, 2000.Google Scholar
2. Yoon, S.Y., Park, S.J., Kim, K.H., Jang, J., Kim, C.O., “Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase”, Journal of Applied Physics, vol.87, no.1, pp.609611, 2000.Google Scholar
3. Kim, T.-K., Kim, G.-B., Lee, B.-I., Joo, S.-K., “The effect of Electrical Stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization”, IEEE Electron Device Letters, vol.21, no.7, pp.347349, 2000.Google Scholar
4. Wang, H.M., Chan, M., Jagar, S., Poon, M.C., Qin, M., Wang, Y.Y., Ko, P.K., “Super Thin-Film Transistor with SOI CMOS Performance Formed by a Novel Grain Enhancement Method”, IEEE Transactions on Electron Device, vol.47, no.8, pp.15801586, 2000.Google Scholar
5. Wong, M., Jin, Z., Bhat, G.A., Wong, P.C., Kwok, H.S., “Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors”, IEEE Transactions on Electron Devices, vol.47, no.5, pp.10611067, 2000.Google Scholar
6. Clarysse, T., Wolf, P. De, Bender, H., Vandervorst, W., “Recent insight into the physical modeling of the spreading resistance point contact”, Journal of Vacuum Science and Technology, vol.B14, no.1, pp.358368, 1996.Google Scholar
7. Ryssel, H., Ruge, I., “Ion implantation”, Wiley, 1986.Google Scholar
8. Clarysse, T., Vandervorst, W., “Need to incorporate the real micro-contact distribution in spreading resistance correction schemes”, Journal of Vacuum Science and Technology, vol.B18, no.1, pp.393400, 2000.Google Scholar
9. Wolf, P. De, Clarysse, T., Vandervorst, W., “Qualification of nanospreading resistance profiling data”, Journal of Vacuum Science and Technology, vol.B16, no.1, pp.320326, 1998.Google Scholar