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Dimensions of Luminescent Porous Silicon by Thermal Effusion of Hydrogen

Published online by Cambridge University Press:  28 February 2011

A. Nikolov ,
V. Petrova-koch ,
G. Polisski  and
F. Koch
A. Nikolov
Affiliation:
Physik-Department E16, Technische Universität München, James-Franck-Strasse, D-85748 Garching, Germany
V. Petrova-koch
Affiliation:
Physik-Department E16, Technische Universität München, James-Franck-Strasse, D-85748 Garching, Germany
G. Polisski
Affiliation:
Physik-Department E16, Technische Universität München, James-Franck-Strasse, D-85748 Garching, Germany
F. Koch
Affiliation:
Physik-Department E16, Technische Universität München, James-Franck-Strasse, D-85748 Garching, Germany
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Abstract

Using electrochemically prepared porous Si with hydride covered internal surfaces, we determine the H-content by thermal effusion and measurement of the total gas evolution. The amount of Si is obtained by weighing. In this way, we derive a value of the ratio of H- to Si-atoms and from the latter a value of the linear dimension of the luminescing particles

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 423
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 see for example: Lehmann, V., Cerva, H., and Gösele, U., Mat. Res. Soc. Symp. Proc. Vol., 256, p.3 (1992) A.G. Cullis, L.T. Canham, and O.D. Dosser, ibid., p.7 (1992)Google Scholar
2 Lehmann, V., Jobst, B., Muschik, T., Kux, A., and Petrova-Koch, V., Jpn. J. Appl. Phys. 32, 2095 (1993)Google Scholar
3 Schuppler, S., Friedmann, S.L., Marcus, M.A., Adler, D.L., Xie, Y.-H., Ross, F.M., Harris, T.D., Brown, W.L., Chabal, Y.J., Brus, LE., and Citrin, P.H., Phys. Rev. Lett. 72, 2648 (1994)Google Scholar
4 Petrova-Koch, V., Kux, A., Müller, F., Muschik, T., Koch, F., and Lehmann, V., Mat. Res. Soc. Symp. Proc., Vol. 256, p.41 (1992)Google Scholar
5 Nikolov, A., Polisski, G., Petrova-Koch, V., and Koch, F., Phys. Rev. B, to be submittedGoogle Scholar
6 Northrup, J.E., Phys. Rev. B44, 1419 (1991)Google Scholar
7 Uda, T. and Hirao, M., J. Phys. Soc. Jpn. 63, suppl. B, p.97 (1994)Google Scholar
8 Koch, F., Mat. Res. Soc. Symp. Proc., Vol. 298, p. 319 (1993)Google Scholar
9 Koch, F., Petrova-Koch, V., and Muschik, T., J. Lumin. 57, 271 (1993)Google Scholar
10 Petrova-Koch, V., Muschik, T., Kovalev, D., and Koch, F., Proc. 7th Int. Symp. on Silicon Materials Sci. and Technol., Vol. 94-10, p.523 (The Electrochemical Society), 1994 Google Scholar
11 Kanemitsu, Y., Ogawa, T., Shiriashi, K., and Takeda, K., Phys. Rev. B48, 4883 (1993)Google Scholar
12 Rückschloss, M., Landkammer, B., Ambacher, O., and Veprek, S., Mat. Res. Soc. Symp. Proc, Vol. 283, p.65 (1993)Google Scholar