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Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

Published online by Cambridge University Press:  11 February 2011

D. Serries ,
T. Geppert ,
K. Köhler ,
P. Ganser  and
J. Wagner
D. Serries
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany; E-mail: [email protected]
T. Geppert
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany; E-mail: [email protected]
K. Köhler
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany; E-mail: [email protected]
P. Ganser
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany; E-mail: [email protected]
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany; E-mail: [email protected]
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Abstract

Recent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelengths up to 2.3 μm. This result demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.2
Copyright
Copyright © Materials Research Society 2003

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References

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