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Diffusivity and Diffusion Mechanism of Oxygen in Silicon

Published online by Cambridge University Press:  28 February 2011

S.-Tong Lee  and
D. Nichols
S.-Tong Lee
Affiliation:
Research Laboratories, Eastman Kodak Co., Rochester, NY 14650
D. Nichols
Affiliation:
Research Laboratories, Eastman Kodak Co., Rochester, NY 14650
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Abstract

The diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows little or no dependence on processing conditions and can be expressed as D = 0.14 exp(−2.53 eV/kT) cm2/s. Diffusivity at 700–1100°C of oxygen implanted in FZ-Si is insensitive to doses and follows D = 0.13 exp(−2.50 eV/kT) cm2/s, which agrees remarkably well with CZ-Si data. Since large variations in point-defect concentrations existed under the conditions studied, the excellent agreement among the diffusivities leads to the conclusion that point defects in Si have little effect on oxygen diffusion. This demonstrates that oxygen diffuses primarily via an interstitial mechanism in the temperature range studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 31
Copyright
Copyright © Materials Research Society 1986

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References

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