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Diffusion-Induced Dislocations in Silicon

Published online by Cambridge University Press:  15 February 2011

X. J. Ning  and
P. Pirouz
X. J. Ning
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
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Abstract

The stresses in a silicon wafer which has undergone diffusion by a high concentration of boron are partially relaxed by the generation of dislocations in the boron-diffused regions of Si. It is found that these dislocations nucleate at the Si surface as dissociated half-loops lying on {111} planes inclined to the surface. Expansion of the half-loops to the diffused/virgin Si interface produce segments of misfit dislocations which are of the dissociated 60º type. These misfit dislocations move deeper into the crystal as the diffusion front moves further in the wafer and often intersect other misfit dislocations on intersecting glide planes. In this paper, the misfit dislocations and the reactions between them are characterized and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 427
Copyright
Copyright © Materials Research Society 1993

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References

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