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Diffusion of Si in GaAs From a Thin Si Film by Pulsed Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

Y. I. Nissim ,
M. Greiner ,
R. J. Falster ,
J. F. Gibbons ,
P. Chye  and
C. Huang
Y. I. Nissim
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
M. Greiner
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
R. J. Falster
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
P. Chye
Affiliation:
Avantek, Santa Clara, CA 95051, USA
C. Huang
Affiliation:
Avantek, Santa Clara, CA 95051, USA
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Abstract

The diffusion of Si into GaAs from a thin source has been investigated. Electron beam evaporated Si films were deposited on chromium–doped GaAs wafers. Pulsed irradiation from a Q–switched Nd:YAG laser resulted in the formation of n+ layers. After metal evaporation these layers displayed nonalloyed ohmic contact behavior of very low contact resistance (5×10−7 Ω−cm2 ) and good thermal stability at 300°C. SIMS analysis of these layers revealed a steplike Si profile and significant chromium redistribution within the laser induced molten layer. A major improvement in surface morphology was obtained using Si02 encapsulants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 677
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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