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Diffusion of Hydrogen and Hydrogen-Dopant Interactions in Si Doped GaAs and GaAlAS Alloys

Published online by Cambridge University Press:  03 September 2012

J. Chevallier ,
B. Machayekhi ,
C. Grattepain ,
R. Rahbi  and
B. Theys
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A. Briand, 92195 - MEUDON, France.
B. Machayekhi
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A. Briand, 92195 - MEUDON, France.
C. Grattepain
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A. Briand, 92195 - MEUDON, France.
R. Rahbi
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A. Briand, 92195 - MEUDON, France.
B. Theys
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A. Briand, 92195 - MEUDON, France.
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Abstract

Deactivation of silicon dopants by hydrogen in GaAs and GaAlAs proceeds through the formation of hydrogen-dopant complexes with thermodynamical and vibrational characteristics weakly sensitive to the alloy composition. However the hydrogen diffusion profile is strongly sensitive to the alloy composition. In GaAs:Si, the profile is an erfc function while in Ga1-xAlxAs:Si with x > xo, it is rather a step like function. From the doping level dependence of xo, we explain the hydrogen diffusion properties within a model where H° and H- govern the diffusion profiles respectively for x < xo and x > xo. We deduce that hydrogen behaves as a deep acceptor in these materials with a level slightly resonant in the conduction band of GaAs and localized in the band gap of Ga1-xAlxAs alloys for x > 0.07.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

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References

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