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Diffusion of Fluorine at High Concentration in Silicon: Experiments and Models

Published online by Cambridge University Press:  17 March 2011

Robert R. Robison ,
Antonio F. Saavedra  and
Mark E. Law
Robert R. Robison
Affiliation:
SWAMP Center, University of Florida, Gainesville, Florida 32611, USA
Antonio F. Saavedra
Affiliation:
SWAMP Center, University of Florida, Gainesville, Florida 32611, USA
Mark E. Law
Affiliation:
SWAMP Center, University of Florida, Gainesville, Florida 32611, USA
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Abstract

We have developed a model for high concentration fluorine diffusion and fluorine diffusion in amorphous silicon. In this context, we define high concentration fluorine to mean fluorine doses above the threshold of amorphization for implantation into silicon, which is approximately 1×1015/cm2 dose. We pre-amorphized with silicon to create a continuous amorphous region, and samples were subsequently implanted with the fluorine conditions of 16keV at 2×1015cm−2 dose, 30keV at 2×1014 cm−2 dose, or 16keV at 8×1015cm−2 dose. Samples were annealed by either conventional furnace or RTA with an N2 ambient for various times at temperatures of 550-750 °C. SIMS was used for depth profiling, and TEM images were also taken of the samples to check for defects and amorphous depth. We then created the model for the data by extending the fluorine model presented in our previous work, and it models the profile motion and the time dependence well. The model is also still capable of describing our previous work and fits it very well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.13
Copyright
Copyright © Materials Research Society 2004

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References

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