Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T01:47:12.946Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion of Au in Amorphous Si During Ion-Beam Irradiation

Published online by Cambridge University Press:  26 February 2011

F. Priolo ,
J. M. Poate ,
D. C. Jacobson ,
J. Linnros ,
J. L. Batstone  and
S. U. Campisano
F. Priolo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. U. Campisano
Affiliation:
University of Catania, Sicily, Italy
Get access

Abstract

We have measured the radiation-enhanced diffusion of Au in amorphous Si in the temperature range 77–700 K. Gold was implanted to depths of 500Å at concentrations of an atomic %. The samples were than amorphized to depths of -2μm using MeV Ar implants at liquid nitrogen temperature. Radiation-enhanced diffusion was induced by a 2.5 MeV Ar beam at doses of 2×1016−2×1017/cm2 and dose rates of 7×1012−7×1013/cm2sec. The diffusion coefficients show three well defined regions. At temperatures <400K diffusion is essentially athermal and due to ballistic mixing. At temperatures between 400K and 700K the diffusion, which is considerably enhanced over the usual thermal values, has an Arrhenius behavior with an activation energy of 0.37 eV. At higher temperatures thermal diffusion, with an activation energy of 1.42 eV, dominates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 87
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Reinelt, M. and Kalbitzer, S., J. Phys. (Paris) Colloq. C 4, 42 (1981), C4–843.Google Scholar
[2] Kalbitzer, S., Reinelt, M. and Stolz, W. in Proceedings of the 4th EC Photovoltaic Solar Energy Conference, Stresa, Stresa May 1982, edited by Bloss, W. H. and Grassi, G. [Reidel, Dortredit, Holland, 1982], p. 163.Google Scholar
[3] Elliman, R. G., Gibson, J. M., Jacobson, D. C., Poate, J. M., and Williams, J. S., Appl. Phys. Lett. 46, 478 (1985).Google Scholar
[4] Poate, J. M., Jacobson, D. C., Williams, J. S., Elliman, R. G., and Boerma, D. O., Nucl. Instr. and Meth. B19/20, 480 (1987).Google Scholar
[5] Wiedersich, H., Nucl. Instr. and Meth. B7/8, 1 (1985)Google Scholar
[6] Marwick, A. D. in Surface Modification and Alloying by Laser, Ion and Electron Beams, edited by Poate, J. M., Foti, G., and Jacobson, D. C., [Plenum Press 1983], p. 211.Google Scholar
[7] Wiedersich, H. in Surface Modification and Alloying by Laser, Ion and Electron Beams, edited by Poate, J. M., Foti, G., and Jacobson, D. C., [Plenum Press 1983], p. 261.Google Scholar
[8] Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J. M., and Jacobson, D. C., J. Appl. Phys. 57, 1795 (1985).Google Scholar
[9] Priolo, F., Poate, J. M., Jacobson, D. C., Linnros, J., Batstone, J. L., and Campisano, S. U., to be published.Google Scholar
[10] Matteson, S., Paine, B. M., Grimaldi, M. G., Mesey, G. and Nicolet, M. A., Nucl. Instr. and Meth. 182/183, 43 (1981).Google Scholar