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Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

Published online by Cambridge University Press:  15 February 2011

H. Baumgart ,
H. J. Leamy ,
L. E. Trimble ,
C. J. Doherty  and
G. K. Celler
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974USA
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974USA
L. E. Trimble
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974USA
C. J. Doherty
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974USA
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Abstract

Grain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 311
Copyright
Copyright © Materials Research Society 1982

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References

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