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Diffusion Lengths in a-Si:H/a-Sic:H and a-Si:H/a-Sige:H Multilayers Determined by the Grating Method

Published online by Cambridge University Press:  16 February 2011

Norbert Bernhard  and
Gottfried H. Bauer
Norbert Bernhard
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Gottfried H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

The technique of the steady-state photocarrier grating (SSPG) has been applied to different series of a-Si:H/a-Si1-xCx:H and a-Si:H/a-Si1-xGex:H Multilayers. In dependence on the electronic well and barrier widths of the Multilayers, characteristic changes of the measured ambipolar diffusion lengths Lambi have been found. The general trend of Lambi can be understood in terms of interface recombination and scattering, when the mean composition of the multilayers is kept constant. In some cases, values of Lambi of multilayers were higher than the corresponding value of a homogeneous a-Si:H reference layer, a fact which might be explained by a dimensional effect. The effect in a-Si:H/a-Si1-xCx:H Multilayers was reduced with green HeNe-laser illumination with photon energies above the Taue gap of the barrier Material, instead of a red illumination generating photocarriers only in the potential wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 625
Copyright
Copyright © Materials Research Society 1994

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References

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