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Dielectrics for GaN Based MIS-Diodes

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
C. R. Abernathy ,
J. D. MacKenzie ,
B. P. Gila ,
S. J. Pearton ,
M. Hong ,
M. Macos ,
M. J. Schurman ,
A. G Baca  and
R. J. Shul
F. Ren
Affiliation:
University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611
J. D. MacKenzie
Affiliation:
University of Florida, Gainesville, FL 32611
B. P. Gila
Affiliation:
University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
M. Macos
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
M. J. Schurman
Affiliation:
EMCORE Inc., Somerset, NJ 07061
A. G Baca
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
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Abstract

GaN MIS diodes were demonstrated utilizing AIN and Ga2O3(Gd2O3) as insulators. A 345 Åof AIN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga2O3(Gd2O3) growth, a multi-MBE chamber was used and a 195 Å oxide is E-beam evaporated from a single crystal source of Ga5Gd3O12. The forward breakdown voltage of AlN and Ga2O3( Gd2O3) diodes are 5V and 6V, respectively, which are significantly improved from ˜1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from ccumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 443
Copyright
Copyright © Materials Research Society 1998

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