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Dielectric Susceptibility and Strain in Sr1-XBaXTio3 Ferroelectric Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

L.A. Knauss ,
J.S. Horwitz ,
D.B. Chrisey ,
J.M. Pond ,
K.S. Grabowski ,
S.B. Qadri ,
E.P. Donovan  and
C.H. Mueller
L.A. Knauss
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
J.S. Horwitz
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
D.B. Chrisey
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
J.M. Pond
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
K.S. Grabowski
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
S.B. Qadri
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook ave., SW, Washington, DC 20375
C.H. Mueller
Affiliation:
SCT, 720 Corporate Circle, Golden, CO 80401 NRL/NRC Cooperative Research associate
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Abstract

Thin films of Srl-xBaxTiO3 (SBT) with x = 0 to 0.80 have been grown in situ by pulsed laser deposition onto single crystals of (001) LaAlO3. the films were grown to thicknesses of 0.6 μ.m and found to be single phase, highly oriented, and characterized by x-ray ω scan widths of ≤ 0.5°. the temperature dependence of the dielectric constant and the relative dissipation factor were measured at 1 kHz using au interdigital capacitors deposited on top of the ferroelectric films. the capacitance measurements indicate that the temperature dependence of the dielectric constant of the film is broad and the maximum is shifted relative to the bulk material. the differences between thin film and bulk properties are attributed to strain in the film resulting from film -substrate lattice mismatch. Thick films (∼7 μm) gave direct evidence for strain through cracking and delamination. X-ray diffraction measurements have been made to determine the non-uniform strain in the thin films which was approximately 0.1%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 73
Copyright
Copyright © Materials Research Society 1995

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References

1 V.K.Varadan, , Gohdgaonkar, D. K., Varadan, V. V., Kelly, J. F. and Glikerdas, P., Microwave Journal, Jan 116 (1992).Google Scholar
2 Horwitz, J. S., Chrisey, D. B., Pond, J. M., R.C.Y. auyeung, Cotell, C. M., Grabowski, K. S., Dorsey, P. C. and Kluskens, M. S., Integrated Ferroelectrics 8, 53 (1995).Google Scholar
3 Smolenskii, G. A. and Rozgachev, K. I., Zh. Tekh. Fiz. 24, 1751 (1954).Google Scholar
4 Grabowski, K. S., Horwitz, J. S. and Chrisey, D. B., Ferroelectrics 116, 19 (1991).Google Scholar
5 Horwitz, J. S., Chrisey, D. B., Grabowski, K. S. and Leuchtner, R. E., Surface and Coatings Technology 51, 290 (1992).Google Scholar
6 Hall, W. H., Proc. Phys. Soc. 62, 741 (1949).Google Scholar