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Dielectric Spectroscopy Study Of Znse Grown By Physical Vapor Transport

Published online by Cambridge University Press:  10 February 2011

Julie Kokan
Affiliation:
School of Materials Science and Engineering, The Georgia Institute of Technology, Atlanta, GA, 30332–0245, [email protected]
Rosario Gerhardt
Affiliation:
School of Materials Science and Engineering, The Georgia Institute of Technology, Atlanta, GA, 30332–0245, [email protected]
Ching-Hua Su
Affiliation:
MSFC, NASA, Huntsville, AL.
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Abstract

ZnSe, although generally thought of as a wide band gap semiconductor, is insulating in the as-grown state. It is only after heat treatment in a zinc rich atmosphere that semiconducting properties are observed Therefore, dielectric spectroscopy is an appropriate tool to study the electrical properties of as grown ZnSe. The dielectric properties of large-grained samples of ZnSe grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions (such as the effect of a seed and the orientation of the gravity field during growth). The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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