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Dielectric and Piezoelectric Properties of PZT 52/48 Thick Films with (100) and Random Crystallorgraphic Orientation

Published online by Cambridge University Press:  21 March 2011

Q. F. Zhou ,
E. Hong ,
R. Wolf  and
S. Trolier-McKinstry
Q. F. Zhou
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
E. Hong
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R. Wolf
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Ferroelectric Pb(Zr1划xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of crystallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to ∼ 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1kHz) for the (100) oriented films was 980-1000, and for the random films ∼ 930-950. In both cases, tanä was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC11.7.1
Copyright
Copyright © Materials Research Society 2001

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