Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:44:54.479Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Growth from Sputtered Atomic Carbon and Hydrogen Gas

Published online by Cambridge University Press:  25 February 2011

Michael A. Kelly ,
Sanjiv Kapoor ,
Darin S. Olson  and
Stig B. Hagstrom
Michael A. Kelly
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Sanjiv Kapoor
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Darin S. Olson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Stig B. Hagstrom
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Get access

Abstract

Diamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 51
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yarbrough, W. A. and Messier, R., Science, 247, 688 (1990).Google Scholar
2. Angus, J. C, Hayman, C. C. Science, 241, 913 (1988).Google Scholar
3. Badzian, A. R., DeVries, R. C., Mat. Res. Bull., 23, 385 (1988).Google Scholar
4. Harris, S. J., Martin, L. R., J. Mater. Res., 5, 2313 (1990).Google Scholar
5. Celii, F. G., Butler, J. E., New Diamond Science and Technology, MRS Int. Conf. Proc., 201 (1991).Google Scholar
6. Harris, S. J., Appl. Phys. Lett., 56, 2298 (1990)Google Scholar
7. Tsuda, M., Nakajima, M, Oikawa, S, J. Am. Chem. Soc., 108, 5780 (1986).Google Scholar
8. Ravi, K. V., Joshi, A., Appl. Phys. Lett., 58 (3), 246 (1991)CrossRefGoogle Scholar
9. Olson, D., Kelly, M. A., Kapoor, S., Hagstrom, S. B., presented at 1991 MRS Fall Meeting, Boston, MA, December 2 1991.Google Scholar