Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:53:17.607Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Growth Chemistry During Atmospheric-Pressure Plasma Cvd

Published online by Cambridge University Press:  10 February 2011

S. L. Girshick  and
J. W. Lindsay
S. L. Girshick
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455
J. W. Lindsay
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

Diamond films were deposited by chemical vapor deposition using a radio- frequency induction plasma operating at 130 torr. Linear growth rates of polycrystalline diamond films ranged from 18 to 37 μm h-1. For a fixed substrate temperature of 1000°C the input methane-hydrogen ratio was varied from 2% to 10%. Over this range the resulting film morpologies changed from faceted ball-like structures to well-faceted diamond, then to non-faceted balls, and for the well- faceted films increases in methane-hydrogen ratio caused the film texture to shift toward the <100> direction. During these experiments gas sampled through an orifice in the center of the substrate was delivered to a gas chromatograph for measurement of stable hydrocarbon species. As the input methane-hydrogen ratio was increased the measured methane-acetylene ratio decreased. The gas chromatograph measurements showed marked differences from measurements made for an RF reactor with somewhat different flow geometry operating at atmospheric pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 3
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spitsyn, B. V., Bouilov, L. L. and Derjaguin, B. V., J. Cryst. Growth 52, 219–226 (1981).Google Scholar
2. Clausing, R. E., Heatherly, L., Horton, L. L., Specht, E. D., Begun, G. M. and Wang, Z. L, Diamond Relat. Mater. 1, 411–415 (1992).Google Scholar
3. Wild, C., Koidl, P., Müller-Sebert, W., Walcher, H., Kohl, R., Herres, N., Locher, R., Samlenski, R. and Brenn, R., Diamond Related Mater. 2, 158–168 (1993).Google Scholar
4. Wild, C., Kohl, R., Herres, N., Müller-Sebert, W. and Koidl, P., Diamond Related Mater. 3, 373–381 (1994).Google Scholar
5. Tamor, M. A. and Everson, M. P., J. Mater. Res. 9, 1839–1848 (1994).Google Scholar
6. Lindsay, J. W., Han, H. and Girshick, S. L., in Proc. 12th Intl. Symp. Plasma Chem., Minneapolis, August 21–25, 1995, v.4, pp. 2023–2028.Google Scholar
7. Kondoh, E., Ohta, T., Mitomo, T. and Ohtsuka, K., Diamond Relat. Mater. 3, 270–276 (1994).Google Scholar
8. Kohzaki, M., Higuchi, K., Noda, S. and Uchia, K., Diamond Relat. Mater. 2, 612–616 (1993).Google Scholar
9. Bieberich, M. T. and Girshick, S. L., Plasma Chem. Plasma Process., in press.Google Scholar
10. Thorpe, T. P., Snail, K. A., Vardiman, R. G. and Smith, T., Proc. 3rd Intl. Symp. Diamond Mater., Honolulu, May 1993, 468 (Electrochemical Society Vol.93-17).Google Scholar
11. Harris, S. J. and Weiner, A. M., J. Appl. Phys. 67, 6520–6526 (1990).Google Scholar
12. Wu, C.–H., Tamor, M. A., Potter, T. J. and Kaiser, E. W., J. Appl. Phys. 68, 4825–4829 (1990).Google Scholar
13. Yu, B. W. and Girshick, S. L., J. Appl. Phys. 75, 3914–3923 (1994).Google Scholar