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Device Related Transport Properties of Quantum Well Systems

Published online by Cambridge University Press:  21 February 2011

X.L. Lei ,
N.J.M. Horing  and
H.L. Cup
X.L. Lei
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China
N.J.M. Horing
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
H.L. Cup
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
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Abstract

The transport properties of two device-related semiconductor microstructure quantum-well systems are addressed here. The first involves the theory of negative differential mini-band conductance (NDC) in a lateral semiconductor superlattice of very thin quantum dots laid out in a square array on a plane, both with and without a normal magnetic field. NDC of the total current is made steeper by the magnetic field, and the Hall coefficient is shown to exhibit hole features near the electron energy band top. The second system discussed here is composed of two parallel planar quantum wells separated by a potential barrier, which exhibits electron-hole Coulomb drag effects shown to involve nonlinearity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 293
Copyright
Copyright © Materials Research Society 1994

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References

1 Reich, R.K., Grondin, R.O., and Ferry, D.K., Phys. Rev. B27, 3483 (1983).Google Scholar
2 Weiss, D., Menschig, A., Klitzing, K.v., and Weimann, G., Surf. Sci. 263, 314 (1992).Google Scholar
3 Gerhardts, R.R., Weiss, D., and Wulf, U., Phys. Rev. B43, 5192 (1991).Google Scholar
4 Esaki, L. and Tsu, R., IBM J. Res. Dev. 14, 61 (1970).Google Scholar
5 Höpfel, R.A., Shah, J., Wolff, P.A., and Gossard, A.C., Phys. Rev. Lett. 56, 2736 (1986).Google Scholar
6 Cui, H.L., Lei, X.L., and Horing, N.J.M., Phys. Rev. B37, 8223 (1988).Google Scholar
7 Tso, H.C. and Horing, N.J.M., Phys. Rev. B44, 11358 (1991).Google Scholar
8 McLean, T.P. and Paige, E.G.S., J. Phys. Chem. Solids 16, 220 (1960).Google Scholar
9 Solomon, P.M., Price, P.J., Frank, D.J., and La Tulipe, D.C., Phys. Rev. Lett. 63, 2508 (1989).Google Scholar
10 Gramila, T.J., Eisenstein, J.P., MacDonald, A.H., Pfeiffer, L.N., and West, K.W., Phys. Rev. Lett. 66, 1216 (1991).Google Scholar
11 Sivan, U., Solomon, P.M., and Shtrikman, H., Phys. Rev. Lett. 68, 1196 (1991).Google Scholar
12 Boiko, I.I., Vasilopoulos, P., and Sirenko, Yu. M., Phys. Rev. B45, 13538 (1992).Google Scholar
13 Tso, H.C., Vasilopoulos, P., and Peeters, F.M., Phys. Rev. Lett. 68, 2516 (1992).Google Scholar
14 Jauho, A. and Smith, H., Phys. Rev. B47, 4420 (1993).Google Scholar
15 Gorbatsevich, A.A., Kapaev, V.V., and Kopaev, Yu.V., Sov. Phys. JETP Lett. 57, 581 (1993).Google Scholar
16 Cui, H.L., Lei, X.L., and Horing, N.J.M., Superlattices and Microstructures 13, 221 (1993).Google Scholar