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Device Applications of Low-Temperature-Grown GaAs

Published online by Cambridge University Press:  15 February 2011

Frank W. Smith
Frank W. Smith*
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, MA 02173-9108
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Abstract

Low-temperature-grown (LTG) GaAs is a unique material that has been used in a variety of device applications to achieve record performance. LTG GaAs used as a buffer layer eliminates sidegating and backgating and in GaAs integrated circuits. Record output power density (1.57 W/mm) and superior microwave-switch performance were demonstrated when LTG GaAs was used at a gate insulator in a metal-insulator-semiconductor field-effect transistor. High-speed (0.5 ps) and high-voltage (1 kV) LTG GaAs photoconductive switches have also been demonstrated. Using the same material, researchers have demonstrated highresponsivity (0.1 A/W), wide-bandwidth (∼ 375 GHz) LTG GaAs photodetectors. Devices incorporating LTG GaAs are currently being optimized for systems applications. LTG GaAs technology can enhance system performance and enable new systems for military and commercial applications in the areas of radar, communications, instrumentation, and highspeed computing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 3
Copyright
Copyright © Materials Research Society 1992

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References

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