Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-27T14:15:38.478Z Has data issue: false hasContentIssue false
  • English
  • Français

The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films

Published online by Cambridge University Press:  01 February 2011

Wai Shing Lau ,
Kum Fai Wong ,
Taejoon Han  and
N. P. Sandler
Wai Shing Lau
Affiliation:
[email protected], Nanyang Technological University, School of EEE, NTU, School of EEE, Block S2.1, Nanyang Avenue, Singapore, Singapore, 639798, Singapore, (65) 97425167, (65) 6733318
Kum Fai Wong
Affiliation:
[email protected], Nanyang Technological University, School of EEE, NTU, Sch ool of EEE, Block S2.1, Nanyang Avenue, Singapore, Singapore, 639798, Singapore
Taejoon Han
Affiliation:
[email protected], Lam Research Corporation, Fremont, California, 94538, United States
N. P. Sandler
Affiliation:
[email protected], Lam Research Corporation, Fremont, California, 94538, United States
Get access

Abstract

Previously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.

Keywords

insulatordefectsthermally stimulated current
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-18
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lau, W.S., Tan, T.S., Sandler, N.P. and Page, B.S., Jpn. J. Appl. Phys. 34, 757 (1995).Google Scholar
[2] Zhu, W., Han, J.-P. and Ma, T.P., IEEE Trans. Electron Dev. 51, 98 (2004).Google Scholar
[3] Lau, W.S., Zhong, L., Lee, A., See, C.H., Han, T., Sandler, N.P. and Chong, T.C., Appl. Phys. Lett. 71, 500 (1997).Google Scholar
[4] Lau, W.S., Leong, L.L., Han, T. and Sandler, N.P., Appl. Phys. Lett. 83, 2835 (2003).Google Scholar
[5] Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H. and Goh, K.S., Jpn. J. Appl. Phys. Part 2, 30, L1843 (1991).Google Scholar
[6] McKinley, K.A. and Sandler, N.P., Thin Solid Films 290–291, 440 (1996).Google Scholar
[7] Lau, W. S., Khaw, K.K., Qian, P.W., Sandler, N.P. and Chu, P.K., Jpn. J. Appl. Phys. 35, 2599 (1996).Google Scholar
[8] Lau, W. S., Qian, P.W., Sandler, N.P., McKinley, K. A. and Chu, P.K., Jpn. J. Appl. Phys. 36, 661 (1997).Google Scholar
[9] van, A.W. Herwaarden, Sensors and Actuators 6, 245 (1984).Google Scholar
[10] Lau, W.S., US Patent 6,909,273, issued on June 21st, 2005.Google Scholar
[11] Lau, W.S. and Han, T., Appl. Phys. Lett. 86, 152107 (2005).Google Scholar
[12] Ullman, F.G., J. Phys. Chem. Solids. 28, 279 (1967).Google Scholar
[13] Lau, W. S., Zhong, L., Han, T. and Sandler, N.P., MRS Symp. Proc. 864, E3.2.1 (2005).Google Scholar