Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:29:23.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

Published online by Cambridge University Press:  03 September 2012

Qiang Zhao ,
Michael Lukitsch ,
Jie Xu ,
Gregory Auner ,
Ratna Niak  and
Pao-Kuang Kuo
Qiang Zhao
Affiliation:
Department of Electrical & Computer EngineeringWayne State University, Detroit, Michigan
Michael Lukitsch
Affiliation:
Department of Electrical & Computer EngineeringWayne State University, Detroit, Michigan
Jie Xu
Affiliation:
Department of Electrical & Computer EngineeringWayne State University, Detroit, Michigan
Gregory Auner
Affiliation:
Department of Electrical & Computer EngineeringWayne State University, Detroit, Michigan
Ratna Niak
Affiliation:
Department of Physics, Wayne State University, Detroit, Michigan
Pao-Kuang Kuo
Affiliation:
Department of Physics, Wayne State University, Detroit, Michigan
Get access

Abstract

Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.69
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wiener-Avnear, Eli, 105 (November 1998).Google Scholar
2. Bauerle, D., Laser Processing and Chemistry, (Springer-Verlag, New York, 1996).Google Scholar
3. Fogarassy, E., Geohegan, D. and Stuke, M., Eds., in Proceedings of the Third International Conference on Laser Ablation, Vols.96–98 of Applied Surface Science, (Elsevier, Amsterdam, 1996).Google Scholar
4. Behrmann, Gregory P. and Duignan, Michael T., Applied Optics.36(20), 4666 (July 1997).Google Scholar
5. Wang, Xiaomei, Leger, James R. and Rediker, Robert H., Applied Optics. 36(20), 4660(July 1997).Google Scholar
6. Han, Jaeheon, Applied Physics Letters. 74(3), 445 (January 1999).Google Scholar
7. Auner, G. W., Lenane, T., Ahmad, F., Naik, R., Kuo, P. K. and Wu, Z. L., Wide Bandgap Electronics Materials, Prelas, M.A., (Eds), 392 (Kluver Publishers 1992).Google Scholar
8. Auner, G. W., Jin, F., Naik, V. M. and Naik, R., J. Appl. Phys. 81 (1999).Google Scholar
9. Thompson, M., Drews, A., Huang, C. and Auner, G. W., MRS Internet J. Nitride Semicond. Res. 4S1, G3.7 (1999).Google Scholar
10. Krupitskaya, R. and Auner, G. W., J. Appl. Phys. 84, 2861(1998).Google Scholar