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Development of THM Growth Technology for CdTe Radiation Detectors and the Applications

Published online by Cambridge University Press:  31 January 2011

Minoru Funaki ,
Hiroyuki Shiraki ,
Mitsuru Tamaki ,
Yoshio Mito  and
Ryoichi Ohno
Minoru Funaki
Affiliation:
[email protected], Acrorad Co., Ltd., Tokyo, Japan
Hiroyuki Shiraki
Affiliation:
[email protected], Acrorad Co., Ltd., Okinawa, Japan
Mitsuru Tamaki
Affiliation:
[email protected], Acrorad Co., Ltd., Okinawa, Japan
Yoshio Mito
Affiliation:
[email protected], Acrorad Co., Ltd., Tokyo, Japan
Ryoichi Ohno
Affiliation:
[email protected], Acrorad Co., Ltd., Okinawa, Japan
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Abstract

4 Nines (99.99%) Cd and Te were purified to the semiconductor grade 6 Nines ∼ 7 Nines purity materials by the distillation and the zone melting processes, in order to be used for the growth of CdTe single crystal. The CdTe single crystal of 100 mm in diameter and 18kg in weight was successfully grown by the traveling heater method (THM). The shape of the growth interface had the key role for the single crystal growth. The distribution of the Te inclusion size was measured by IR microscopy. The uniformity of mobility-lifetime products and energy resolution in the wafer were also evaluated. The CdTe X-ray flat panel detector (FPD) was developed using the THM grown CdTe single crystal wafer. The CdTe pixel detectors with 100 mm pixel pitch were flip-chip bonded with the C-MOS readout ASIC and lined up on the print circuit board to cover the active area of 77 mm × 39 mm. The evaluation results showed that the CdTe X-ray FPD is promising as the imager for the non-destructive testing.

Keywords

crystal growthelectrical propertiesII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1164: Symposium L – Nuclear Radiation Detection Materials–2009 , 2009 , 1164-L03-02
Copyright
Copyright © Materials Research Society 2009

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