Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:23:35.077Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of HgCdTe for LWIR Imagers

Published online by Cambridge University Press:  25 February 2011

Joseph L. Schmit
Joseph L. Schmit*
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Ave. So. Bloomington, MN 55420
Get access

Abstract

This paper provides a historical perspective on the emergency of HgCdTe as the material of choice for long wavelength infrared (LWIR) imagers. The need for devices which see room temperature objects through the atmospheric window actually drove the development of this material. The lack of elemental or compound semiconductors having the desired wavelength response forced the choice of the alloy semiconductor, HgCdTe. The development of this material in several countries and companies beginning in the late 1950's is traced. The crystal growth methods used to grow HgCdTe have included melt growth techniques such as Bridgman, zone-melting, quench-anneal and slushgrowth. The solution growth techniques include growth from HgTe-rich, Te-rich and Hg-rich solutions. Vapor phase growth has included evaporation, sputtering, molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). No perfect method has yet been developed, but several have provided material for the large area arrays needed for modern imagers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 27
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kruse, P.W., Semiconductors and Semimetals, 18, Edited by Willardson, and Beer, , (Academic Press, New York, 1981) p. 1–5.Google Scholar
2. Kruse, P.W., McGlauchlin, L.D. and McQuistan, R.B., Elements of IR Technology (Wiley, London, 1962) p. 164.Google Scholar
3. Schmit, J.L., Crystal Growth of Electronic Materials, edited by E., Kaldis (Elsevier Sci. Publishers, 1985) chapter 20, p. 281.Google Scholar
4. Lawson, W.D., Nielsen, S., Putley, E.H. and Young, A.S., J. Phys. Chem. Solids 9, 325 (1959).Google Scholar
5. Harman, T.C., Strauss, A.J., Dickey, D.H., Dresselhaus, M.S., Wright, G.B. and Mavroides, J.G., Phys. Rev. Lett. 7, 403 (1961).Google Scholar
6. Kruse, P.W., Blue, M.D., Garfunkel, J.H., and Saur, W.D., Infrared Phys. 2, 53 (1962).Google Scholar
7. Woolley, J.C. and Ray, B., J. Phys. Chem Solids 13, 151 (1960).Google Scholar
8. Bailly, F., Cohen-Solal, G. and Marfaing, Y., C.R. Acad. Sci. Paris 257, 103 (1963).Google Scholar
9. Galazka, R.R., Acta Phys. Polon. 24, 791 (1963).Google Scholar
10. Kolomiets, B.T. and Mal'kova, A.A., Fiz. Tverd. Tele 5, 1219 [English transl.]: Sov. Phys. Solid State 5, 889 (1963).Google Scholar
11. Harman, T.C., Physics and Chemistry of II–VI Compounds, edited by N., Aven and J.S., Prener, (Wiley, New York, 1967) P. 784 Google Scholar
12. Parker, S.G. and Kraus, K., U.S. Patent 3 468 363 (1969).Google Scholar
13. Bartlett, B.E., Capper, P., Harris, J.E. and Quelch, M.J.T., J. Crystal Growth 46, 623 (1979).Google Scholar
14. Kruse, P.W. and Schmit, J.L., U.S. Patent 3 723 190 (1973). Filed October 9, 1968; held under secrecy order until 1973.Google Scholar
15. Harman, T.C., J. Electron. Mater. 1, 230 (1972).Google Scholar
16. Speerschneider, C.J., unpublished work.Google Scholar
17. Nelson, D.A., Higgins, W.M., Lancaster, R.A., Murosako, R.P. and Roy, R.G., Proc. IRIS, Vol.29, p. 389–398 (1984), unclassified.Google Scholar
18. Kalisher, M.H., J. Crystal Growth 70, 365 (1984).Google Scholar
19. Schmit, J.L., Hager, R.J. and Wood, R.A., J. Crystal Growth 56, 485 (1982).Google Scholar
20. Shin, S.H., Chu, M., Vanderwyck, A.H.B., Lanir, M. and Wang, C.C., J. Appl. Phys. 51, 3772 (1980).Google Scholar
21. Tufte, O.N. and Stelzer, E.L., J. Appl. Phys. 40, 4559 (1969).Google Scholar
22. Faurie, J.P. and Million, A., Appl. Phys. Letters 41, 264 (1982).Google Scholar
23. Irvine, S.J.C. and Mullin, J.B., J. Crystal Growth 55, 107 (1981).Google Scholar
24. Hyliands, N.J., Thompson, J., Bevan, N.J., Woodhouse, K.T. and Vincent, V., J. Vac. Sci. Technol. A(4), 2217 (1986).Google Scholar
25. Schmit, J.L., J. Crystal Growth 65, 249 (1983).Google Scholar