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Development of an Atomic Oxygen Source for Thin Oxide Film Formation

Published online by Cambridge University Press:  22 February 2011

S. Inoue
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
Y Kawagoe
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
K. Yamanishi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
M. Tanaka
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
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Abstract

Atomic oxygen promotes the oxidation of thin films. The authors developed a silent discharge type atomic oxygen source for thin oxide film formation. The atomic oxygen source consists of a quartz discharge tube and two cylindrical electrodes that are attached to the outside wall of the tube. The atomic oxygen concentration is estimated to be 3%.

The atomic oxygen source was installed in an ICB (Ionized Cluster Beam) apparatus and applied to the formation of Er-Ba-Cu-0 thin films. By introducing the atomic oxygen during deposition, a film showing superconductivity at 81K was obtained when the substrate temperature was 570ºC. Also the substrate temperature to obtain a film showing superconductivity at 77K was estimated to be 50 °C lower than that for obtaining superconducting film formation in an atmosphere of 6% ozone. The atomic oxygen source was also applied to SrTiO3 thin film formation. Electrical properties of this film were examined and compared with those of films prepared in an atmosphere of 6% ozone. The dielectric constant of SrTiO3 film was improved from 60 to 180 by introducing atomic oxygen instead of 6% ozone. Therefore the atomic oxygen source was proven to be advantageous for thin oxide film formation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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