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Development of a Robust KIO3 Tungsten CMP Process

Published online by Cambridge University Press:  10 February 2011

Albert H. Liu ,
Randy Solis  and
John Givens
Albert H. Liu
Affiliation:
CMP/New Technology Engineering, VLSI Technology, Inc. San Antonio, TX 78251, [email protected]
Randy Solis
Affiliation:
CMP/New Technology Engineering, VLSI Technology, Inc. San Antonio, TX 78251.
John Givens
Affiliation:
CMP/New Technology Engineering, VLSI Technology, Inc. San Antonio, TX 78251.
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Abstract

A production worthy, Tungsten Chemical Mechanical Polish (CMP) process using a commercially available K103 slurry was developed, characterized, and tested for sub-0.35μm multilevel interconnect fabrication. The effects of pre-tungsten CMP process on tungsten polish are reported in detail. A head-to-head comparison of the optimized KIO3 process with the standard Fe(NO3)3 process is described. Critical CMP tool parameters (process and hardware) were flexed using statistically valid experimental designs. The advantages and disadvantages of a post tungsten polish, oxide buff, are discussed. Across-wafer non-uniformity, specifically the enhanced polish rate of tungsten at the wafer edge, was significantly reduced with the optimized process parameters and hardware setup. Also, an automated endpoint system was utilized and a set of robust endpoint algorithms were developed to minimize the amount of oxide loss during tungsten CMP processing. Finally, the positive effects of the optimized KIO3 tungsten CMP process on interconnect integration and die yield are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 83
Copyright
Copyright © Materials Research Society 2000

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References

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