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Development of a high-growth rate 3C-SiC on Si CVD process

Published online by Cambridge University Press:  01 February 2011

M. Reyes ,
Y. Shishkin ,
S. Harvey  and
S. E. Saddow
Y. Shishkin
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
S. Harvey
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
S. E. Saddow
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
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Abstract

Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

Keywords

crystal growthmorphologychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B08-01
Copyright
Copyright © Materials Research Society 2006

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References

[1] Nishino, S., Powell, J. A. and Will, H. A., Appl. Phys. Lett., 42(5) (1983) 460.Google Scholar
[2] Nagasawa, H., Yagi, K., and Kawahara, T., J. Cryst. Growth 237–239 (2002) 1244.Google Scholar
[3] Kordina, O., Björketun, L.-O., Henry, A., Hallin, C., Glass, R.C., Hultman, L., Sundgreen, J.-E., and Janzén, E., J. Cryst. Growth 154 (1995) 303.Google Scholar
[4] Chassagne, T., Leycuras, A., Balloud, C., Arcade, P., Peyre, H., and Juillaguet, S., Mat. Sci. Forum 457–460 (2004) 273.Google Scholar
[5] Nagasawa, N. and Yagi, Y., Phys. Stat. Sol. 202 (1997) 335.Google Scholar
[6] Wang, C. F, Tsai, D. S, Mat. Chem. Phys. 63 (2000) 196.Google Scholar
[7] Reyes, M., Waits, M., Harvey, S., Shishkin, Y., Geil, B., Wolan, J.T., and Saddow, S.E., to be published in Mat. Sci. Forum (2006).Google Scholar
[8] Saddow, S.E. and Agarwal, A., Advances in Silicon Carbide Processing and Technology Applications, Artech House, Inc., Norwood, 2004, Chapter 1.Google Scholar
[9] Schuegraf, K. K., Handbook of Thin Film Deposition Processes and Techniques, Noyes Publications, New Jersey (1988) 33.Google Scholar
[10] Myers, R., Kordina, O., Shishkin, Z., Rao, S., Everly, R., and Saddow, S. E., Mat. Sci. Forum 483–485 (2005) 73.Google Scholar
[11] Via, F. La, et. al., presented to be published in Mat. Sci. Forum (2006).Google Scholar
[12] Coletti, C., Hetzel, M., Virojanadara, C., Starke, U., and Saddow, S. E,ibid.Google Scholar