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Development and Characterization of a Cvd System for Thin-Film Solar Cell Manufacturing

Published online by Cambridge University Press:  10 February 2011

F. R. Faller ,
A. Hurrle  and
N. Schillinger
F. R. Faller
Affiliation:
Fraunhofer Institute for Solar Energy Systems, ISE. 79100 Freiburg, Germany, [email protected]
A. Hurrle
Affiliation:
Fraunhofer Institute for Solar Energy Systems, ISE. 79100 Freiburg, Germany
N. Schillinger
Affiliation:
Fraunhofer Institute for Solar Energy Systems, ISE. 79100 Freiburg, Germany
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Abstract

With the development of crystalline-silicon thin-film solar cells (c-SiTFC) CVD has gained importance in a new field of application. In recent years research resulted in a large variety of different concepts of c-SiTFCs. Many of these concepts require the deposition of a silicon film of good quality. i.e., at high temperature. However, little effort has been made up to this point to develop a suitable apparatus for that purpose, especially for the case of mass production of such cells. In this paper we present a self-constructed CVD system that we believe has the potential to meet the goals of an economical production of c-SiTFCs. An extension of the existing apparatus into a system in which the substrates enter the reactor at one side and leave it at the other side in a continuous way is feasable.

The present system is characterized according to its behavior when typical CVD parameters are changed, the silicon conversion yield was investigated, and solar cells with a maximum efficiency of 15.3% were fabricated from epitaxial layers deposited on various substrates

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 63
Copyright
Copyright © Materials Research Society 1998

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References

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