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Determination of the Density of States in a-SiC:H from Transient Photoconductivity

Published online by Cambridge University Press:  10 February 2011

R. Brüggemann ,
C. Maint ,
M. Rösch  and
D. P. Webb
R. Brüggemann
Affiliation:
FB Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, F.R. Germany
C. Maint
Affiliation:
Dept. of Electrical Engineering, University of Abertay Dundee, Bell St, Dundee, Scotland
M. Rösch
Affiliation:
FB Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, F.R. Germany
D. P. Webb
Affiliation:
Dept. of Electrical Engineering, University of Abertay Dundee, Bell St, Dundee, Scotland
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Abstract

In order to fill the gap of little knowledge about their details, the density of states distributions (DOS) in the upper half of the band gap were determined for a series of wellcharacterised amorphous hydrogenated silicon carbide samples with Tauc gaps between 1.78 and 1.94 eV. A DOS spectroscopic technique, based on the Fourier transform of time-sampled transient photocurrents, allowed the DOS determination on an absolute scale for a wide energy range. The DOS increases in the band tail region with carbon content. It exhibits a minimum at about 0.5 eV which is followed by a defect structure at deeper energies, the density of which also increases with C-content. We find a decreasing time-dependent drift mobility for larger C-content consistent with the lower transit time-determined drift mobility in time-of-flight.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 697
Copyright
Copyright © Materials Research Society 1996

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