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Determination of the Defect Redistribution and Charge Injection Contributions to the a-Si:H Thin-Film Transistor Instability

Published online by Cambridge University Press:  16 February 2011

R. Carluccio ,
A. Pecora ,
D. Massimiani  and
G. Fortunato
R. Carluccio
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 ROMA, ITALY
A. Pecora
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 ROMA, ITALY
D. Massimiani
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 ROMA, ITALY
G. Fortunato
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 ROMA, ITALY
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Abstract

The effects of bias-stressing n- and p-channel thin-film transistors, employing thermal silicon dioxide as gate insulator, have been analysed by using different techniques, including field-effect, space-charge photomodulation and photo-induced discharge. Photo-induced discharge experiments have pointed out as parasitic resistance effects can be present in p-channel devices. In order to reduce this problem, thin active layer p-channel devices have been fabricated and, combining these results to those relative to the n-channel transistors, we deduced a predominance of charge injection at low and moderate stress-biases while at high-stress biases modifications in the density of states take place.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 829
Copyright
Copyright © Materials Research Society 1994

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References

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