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Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

Published online by Cambridge University Press:  13 June 2012

D. Cheney ,
R. Deist ,
B. Gila ,
F. Ren ,
P. Whiting ,
J. Navales ,
E. Douglas  and
S. Pearton
D. Cheney
Affiliation:
Electrical & Computer Engineering, University of Florida, 100 Center Drive, Gainesville, FL 32611, 352-219-0290, 352-846-2877 FAX, [email protected]
R. Deist
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
B. Gila
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Chemical Engineering, University of Florida, Gainesville, FL 32611
P. Whiting
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
J. Navales
Affiliation:
Electrical & Computer Engineering, University of Florida, 100 Center Drive, Gainesville, FL 32611, 352-219-0290, 352-846-2877 FAX, [email protected]
E. Douglas
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
S. Pearton
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
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Abstract

By pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.

AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.

This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

Keywords

III-Vdevicesoptical
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g09-01
Copyright
Copyright © Materials Research Society 2012

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References

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