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Determination Factors of Strain-relaxed Complex Domain Structure observed in Thick Epitaxial pb(Zr,Ti)O3Films

Published online by Cambridge University Press:  31 January 2011

Hiroshi Nakaki ,
Satoru Utsugi ,
Takashi Fujisawa ,
Mitsumasa Nakajima ,
Yoshitaka Ehara ,
Tomoaki Yamada ,
Hitoshi Morioka ,
Toshihiro Ifuku  and
Hiroshi Funakubo
Hiroshi Nakaki
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Satoru Utsugi
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Takashi Fujisawa
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Mitsumasa Nakajima
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Yoshitaka Ehara
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Tomoaki Yamada
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Hitoshi Morioka
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
Toshihiro Ifuku
Affiliation:
[email protected], Canon Inc., Nano materials Technology Development Center, Corporate R&D Headquarters, Tokyo, Japan
Hiroshi Funakubo
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, Yokohama, Japan
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Abstract

Crystal structure change with the temperature was investigated for 3 m-thick (100)/(001)-oriented epitaxial PbTiO3 films grown on SrTiO3 substrates. Complex strain-relaxed domain structure labeled as Type III was observed and directly transformed to the cubic phase at about 490°C. This transition temperature and the lattice parameter (a and c- axes) change with the temperature well agreed with the reported data for the PbTiO3 powders. The volume fraction of the (001) orientations, Vc, was almost independent of the temperature up to the phase transition temperature. The tilting angles of the spots in XRD plan view were almost the same with the estimated ones from the lattice parameters and the Vc. This suggests that the angle of the domains identified by the domain structure in Type III. This structure is mainly determined by the tetragonality, (c/a ratio) and the Vc.

Keywords

ferroelectricitypiezoelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F08-08
Copyright
Copyright © Materials Research Society 2010

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References

1 Jaffe, B., Cook, W. R., and Jaffe, H.: PIEZOELECTRIC CERAMICS. (Academic Press, London, 1971) Chap. 7, P. 135.Google Scholar
2 Nagarajan, V., Stanishevsky, A., Chen, L., Zhao, T., Liu, B.-T., Melngailis, J., Roytburd, A. L., Ramesh, R., Finder, J., Yu, Z., Droopad, R., and Eisenbeiser, K., Appl. Phys. Lett., 81, 4215, (2002).Google Scholar
3 Yamamoto, T., Yamamoto, M., Nishida, K., Funakubo, H., Iijima, T., Aiso, T., and Ichikawa, Y., Jpn. J. Appl. Phys., 48, 09KA04 (2009).Google Scholar
4 Park, S. and Shrout, T., J. Appl. Phys., 82, 1804, (1997).Google Scholar
5 Nakaki, H., Kim, Y., Yokoyama, S., Ikariyama, R., Funakubo, H., Nishida, K. and Saito, K., Appl. Phys. Lett., 91, 112904, (2007).Google Scholar
6 Nakaki, H., Kim, Y., Yokoyama, S., Ikariyama, R., Funakubo, H., Nishida, K., Saito, K., Morioka, H., Sakata, O., Han, H., and Baik, S., J. Appl. Phys., 105, 014107, (2009).Google Scholar
7 Nakaki, H., Kim, Y., Yokoyama, S., Ikariyama, R. and Funakubo, H., Streiffer, S.K., Nishida, K., Saito, K., and Gruverman, A., J. Appl. Phys., 104, 064121, (2008).Google Scholar
8 Nakaki, H., Kim, Y., Yokoyama, S., Ikariyama, R., Funakubo, H., Streiffer, S. K., Nishida, Ken, and Saito, Keisuke, Mater. Res.Soc.Proc., 1034, 1034–K10 (2008).Google Scholar
9 Utsugi, S., Fujisawa, T., Ikariyama, R., Yasui, S., Nakaki, H., Yamada, T., Ishikawa, M., Matsushima, M. and Funakubo, H., Appl.Phys. Lett., 94, 052906–1 (2009).Google Scholar
10 Nagashima, K., Aratani, M., Funakubo, H., Jpn. J. Appl. Phys., 39(10A), L996–L998 (2000).Google Scholar
11 Shirane, G., and Hoshino, S., J. Phys. Soc. Jpn., 6, 265, (1951).Google Scholar
12 Batzer, R., Yen, B., Liu, D., Chen, H., Kubo, H., and Bai, G., J. Appl. Phys., 80, 6235, (1996).10.1063/1.363700Google Scholar