Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:40:42.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Detection of Voids in Tungsten Interconnect Vias Using Laser-Induced Surface Acoustic Waves

Published online by Cambridge University Press:  01 February 2011

Joshua Tower ,
Michael Gostein ,
Koichi Otsubo  and
Atsushi Kawasaki
Joshua Tower
Affiliation:
Philips Advanced Metrology Systems, Inc., 12 Michigan Drive, Natick, MA 01760USA
Michael Gostein
Affiliation:
Philips Advanced Metrology Systems, Inc., 12 Michigan Drive, Natick, MA 01760USA
Koichi Otsubo
Affiliation:
Philips Advanced Metrology Systems, Inc., Kohnan, Minato-ku, Tokyo 108-8507Japan
Atsushi Kawasaki
Affiliation:
NEC Electronics, Process Technology Division, Sagamihara, Japan
Get access

Abstract

Test wafers were prepared under different process conditions of barrier and seed film deposition, in order to study the effects on tungsten plug filling. Tungsten fill percentage was measured using laser-induced surface acoustic wave metrology on plug arrays of varying plug diameter and the results were verified by SEM cross-section. The data show that, for via diameters of 0.12 micron or less, the seed deposition process is a critical factor in effective (void free) plug filling. Seed deposition by ALD and low-temperature CVD were found to be far more effective than conventional CVD. Changing the thickness of the TiN barrier layer was found to have minimal effect on the occurrence of voids. For via diameters greater than 0.12 microns, all of the seed processes led to relatively little voiding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gostein, M., et al, “Thin Film Metrology Using Impulsive Stimulated Thermal Scattering (ISTS),” in Handbook of Silicon Semiconductor Metrology, ed. Diebold, Alain (Marcel Dekker, New York, 2001), pp. 167–196.Google Scholar
2. Gostein, M., Joffe, M., Maznev, A.A., Banet, M., Moore, C.J.L., “Non-Contact Metal Film Metrology Using Impulsive Stimulated Thermal Scattering,” in Characterization and Metrology for ULSI Technology, ed. Seiler, D.G. et al, AIP Conference Proceedings Volume 550 (American Institute of Physics: Melville, New York, 2000), pp. 478–488.Google Scholar