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The Detailed Variation of Boron and Fluorine Profiles with Tilt and Rotation Angles for BF2+ ION Implantation in (100) Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
Over 250 boron and over 250 fluorine profiles have been obtained from BF2+ implants over a wide range of implant energies, doses, tilt angles, and rotation angles. A detailed study has been conducted on the boron and fluorine profile variations with the tilt and rotation angles over the available range of energies and doses. Channeling through a few low index axial and planar channels in (100) silicon has been found to account for the observed profile variations with implant angle. Tilt and rotation angle combinations which minimize channeling and ensure process uniformity have been deduced.
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- Copyright © Materials Research Society 1992
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