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A Detailed Study of Cu(In,Ga)Se2 Thin Films by Electron-Beam-Induced-Current and Cathodoluminescence

Published online by Cambridge University Press:  21 March 2011

M.J. Romero
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
F.S. Hasoon
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
R. Garcia
Affiliation:
Universidad de Cadiz, Cadiz, Spain
R. Noufi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
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Abstract

Cu(In,Ga)Se2 (CIGS) thin films were deposited using the three-stage process. At the third stage, an amount of Indium was added to the CIGS that is greater than the standard used in processing high-efficient CIGS solar cells. The effects of Indium excess and substrate temperature were then investigated by electron-beam-induced-current (EBIC) and cathodoluminescence (CL). The addition of more indium compared to the standard noticeably affects the ZnO/CdS/CIGS heterojunction. On the other hand, the substrate temperature primarily affects the luminescence behavior of these films. It is suggested than In enrichment and Na incorporation play a main role in the electronic properties of the film. From these results, the efficiencies obtained for this set of CIGS cells are finally understood.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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