Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:17:16.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Desorption and Segregation of Indium and its Dependence on Surface As-coverage

Published online by Cambridge University Press:  15 February 2011

M. J. Ekenstedt ,
H. Yamaguchi  and
Y. Horikoshi
M. J. Ekenstedt
Affiliation:
NTT, Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan, [email protected]
H. Yamaguchi
Affiliation:
NTT, Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan, [email protected]
Y. Horikoshi
Affiliation:
NTT, Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan, [email protected]
Get access

Abstract

We investigate the desorption and segregation rates of Indium atoms on fully strained InxGal-xAs surfaces and their dependence on the surface As-coverage. The results are obtained by measuring the desorption of As using reflection high energy electron diffraction. The desorption rate of As is sensitive to the interaction energies between the group III atoms and the As-atoms. A change in the surface Indium-fraction results in a corresponding change in the desorption behavior of the As-atoms. Information of the surface alloy concentration can thus be obtained. Using this technique we find that segregation and desorption of Indium atoms on strained InxGa1-xAs surfaces is reduced for As-covered 2x4 reconstructed surfaces. The desorption rate of Indium is found to increase with the proximity to an inverted InAs/InxGalxAs interface. In contrast, the normal interface consisting of an InxGal-xAs layer grown on InAs is not seen to influence the desorption rate. This results is attributed to growth related defects specific for the inverted interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 31
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Emeny, M.T., Howard, L.K., Homewood, K.P., Lambkin, J.D., J. Cryst. Growth 111,413 (1991).Google Scholar
[2] Evans, K.R., Stutz, C.E., Lorance, D.K., and Jones, R.L., J. Vac. Sci. Technol. B7, 259 (1989).Google Scholar
[3] Yamaguchi, H. and Horikoshi, Y., Phys. Rev. Lett. 70, 1299 (1993).Google Scholar
[4] Ekenstedt, M. J., Yamaguchi, H. and Horikoshi, Y., J. Crystal Growth 150, 473 (1995).Google Scholar
[5] Muraki, K., Fukatsu, S., Shiraki, Y., and Ito, R., Appl. Phys. Lett. 61(1992), 557 Google Scholar
[6] Bosacchi, A., Colonna, F., Franchi, S., Pascarella, P., Allegri, P., Avanzini, V., J. Crystal Growth 150, 185 (1995).Google Scholar
[7] Evans, K.R., Stutz, C.E., Lorance, D.K., and Jones, R.L., J. Vac. Sci. Technol.B 7, 259 (1989).Google Scholar
[8] Krispin, P., Hey, R. and Kostial, H., J. Appl. Phys 77, 5773 (1995).Google Scholar