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Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser

Published online by Cambridge University Press:  11 February 2011

Shelia C. Luke ,
Abhishek Motayed  and
Aris Christou
Shelia C. Luke
Affiliation:
Department of Materials Science and Engineering, University of Maryland College Park, College Park, Maryland 20742, U.S.A
Abhishek Motayed
Affiliation:
Department of Electrical Engineering, Howard University Washington, D.C., U.S.A
Aris Christou
Affiliation:
Department of Materials Science and Engineering, University of Maryland College Park, College Park, Maryland 20742, U.S.A
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Abstract

Short-wavelength vertical cavity surface emitting lasers (VCSELS) are typically important for high-density optical memory and optical imaging systems. An AlGaN/GaN multiquantum well (MQW) VCSEL was designed for operation at wavelength of 364 nm. The design process consisted of careful selection of materials and optimization of the parameters for distributed Bragg reflector (DBR) stacks, active region, and calculation of the threshold current density, external quantum efficiency, and threshold carrier concentration. InGaN/AlGaN material system was selected for constructing DBR stacks in order to minimize power dissipation and to achieve high reflectivity. A reflectivity of 99% was calculated for 33 pairs in the bottom DBR stack and 97% was calculated for 30 pairs in the top DBR stack. An external quantum efficiency of 85% has been achieved through parametric optimization. Results were comparable to that of the similar structures based on the review of recent literatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.48
Copyright
Copyright © Materials Research Society 2003

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References

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