Hostname: page-component-5cf477f64f-pw477 Total loading time: 0 Render date: 2025-04-02T03:29:03.589Z Has data issue: false hasContentIssue false
  • English
  • Français

Design Consideration of GaN-Based Surface Emitting Lasers

Published online by Cambridge University Press:  10 February 2011

T. Honda ,
F. Koyama  and
K. Iga
T. Honda
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, [email protected]
F. Koyama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, [email protected]
K. Iga
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, [email protected]
Get access

Abstract

The threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1151
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Honda, T., Katsube, A., Sakaguchi, T., Koyama, F. and Iga, K., Jpn. J. Appl. Phys. 34, 3527 (1995).Google Scholar
2. Khan, M. A., Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, T. and George, T., Appl. Phys. Lett., 65, 520 (1994).Google Scholar
3. Redwing, J. M., Loeber, D. A. S., Anderson, N. G., Tischler, M. A. and Flynn, J. S., Appl. Lett. 69,1 (1996).Google Scholar
4. DenBaars, S. P., High Speed Optoelectronics Conference for Communications, Snowbird, UT, 1996 (unpublished).Google Scholar
5. Oshinski, M., Smagley, V. A. and Eliseev, P. G., High Speed Optoelectronics Conference for Communications, Snowbird, UT, 1996 (unpublished).Google Scholar
6. Asada, M., Kameyama, A. and Suematsu, Y., IEEE J. Quantum Electron. 20, 745 (1984).Google Scholar
7. Asada, M. and Suematsu, Y., IEEE J. Quantum Electron. 21, 434 (1985).Google Scholar
8. Katsube, A., Honda, T., Sakaguchi, T., Koyama, F. and Iga, K., Topical Workshop on III-V Nitrides, P-8, Nagoya, Japan, 1995.Google Scholar
9. Kamiyama, S., Ohnaka, K., Suzuki, M. and Uenoyama, T., Jpn. J. Appl. Phys. 34, L821 (1995).Google Scholar
10. Domen, K., Horino, K., Kuramata, A. and Tanahashi, T., 15th IEEE International Semiconductor Laser Conference, W2.7, Haifa, Israel, 1996.Google Scholar
11. Chung, S. L., IEEE J. Quantum Electorn., 32, 1791 (1996).Google Scholar
12. Maruska, H. P. and Tietjen, J. J.: Appl. Phys. Lett. 15, 327 (1969).Google Scholar
13. Barker, A. S., Ilegems, M.: Phys. Rev. B7 (1973) 743.Google Scholar
14. Pankove, J. I., Bloom, S., Harbeke, G.: RCA Rev. 36, 163 (1975).Google Scholar
15. Amano, H., Watanabe, N., Koide, N. and Akasaki, I.: Jpn. J. Appl. Phys. 32, L1000 (1993).Google Scholar
16. Yamada, M. and Ishiguro, H., Jpn. J. Appl. Phys. 19, 135 (1980).Google Scholar
17. Tamanuki, T., Koyama, F. and Iga, K., Jpn. J. Appl. Phys. 30, L593 (1991).Google Scholar
18. Amano, H., Watanabe, N., Koide, N. and Akasaki, I., Jpn. J. Appl. Phys. 32 , L1000 (1993).Google Scholar
19. Ejder, E., Phys. Status Solidi a 6, K39 (1971).Google Scholar
20. Collins, A. T., Lightowlers, E. C. and Dean, P. J., Phys. Rev. 158, 833 (1967).Google Scholar
21. Khan, M. A., Kuznia, J. N., Van Hove, J. M. and Olson, D. T., Appl. Phys. Lett. 59, 1449 (1991).Google Scholar
22. Detchprohm, T., Hiramatsu, K., Sawaki, N. and Akasaki, I., J. Cryst. Growth 145, 192 (1994).Google Scholar
23. Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett., 64, 1687 (1994).Google Scholar
24. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T., Koike, M., Jpn. J. Appl. Phys. 34, L1517 (1995).Google Scholar
25. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
26. Saotome, K., Matsutani, A., Shirasawa, T., Mori, M., Honda, T., Sakaguchi, T., Koyama, F. and Iga, K., will be presented at the 1996 MRS Fall Meeting, Boston, MA, 1996.Google Scholar
27. Saotome, K., Honda, T., Matsutani, A., Koyama, F. and Iga, K. in Proceeedings of International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha, Tokyo, 1996) pp. 506–509.Google Scholar
28. Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fijimoto, H., Kokubun, Y., Ohba, Y., Hatagoshi, G. and Ishikawa, M., Jpn. J. Appl. Phys., 35, L1315 (1996).Google Scholar
29. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28 , L2112 (1989).Google Scholar
30. Nakamura, S., Iwasa, N., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
31. Iga, K. in Proceeedings of International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha, Tokyo, 1996) pp. 263–266.Google Scholar