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Design and Simulation of High Efficiency Silicon Light-Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Grant Z. Pan ,
Jaime Peretzman ,
Dae H. Pak  and
Li P. Ren
Grant Z. Pan
Affiliation:
[email protected], UCLA, Microfabrication Laboratory/EE, 420 WESTWOOD PLAZA, LOS ANGELES, CA, 90095, United States, 310 825 4593, 310 267 5277
Jaime Peretzman
Affiliation:
[email protected], University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Dae H. Pak
Affiliation:
[email protected], University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Li P. Ren
Affiliation:
[email protected], Global Nanosystems, Inc., Nanoelectronics and Nanophotonics Laboratory, Los Angeles, CA, 90025, United States
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Abstract

Four boron-implanted p-n junction silicon light-emitting diode structures were designed and simulated under an identical process flow by using Silvaco simulators.In the simulation, only boron-implant parameters and post-implant anneal conditions were varied to identify and compare the physical, electrical, and optical properties of the structures.It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy.

Keywords

Sisimulationluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-23
Copyright
Copyright © Materials Research Society 2007

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References

1. Ng, W.L., Lourenco, M.A., Gwilliam, R.M., Ledain, S., Shao, G., and Homewood, K.P., Nature 410 (2001) 192.Google Scholar
2. Kittler, M., Arguirov, T., Fischer, A., and Seifert, W., Opt. Mater. 27 (2005) 967.Google Scholar
3. Pan, G.Z., Ostroumov, R.P., Lian, Y.G., Tu, K.N., and Wang, K.L., IEDM Tech. Digest (2004), pp. 343–34Google Scholar
4. Schreiber, H.-U., Electrochem. Sol.-Stat. Lett. 10 (2007) H31–33.Google Scholar
5. Sobolev, N. A., Emerl'yanov, A. M., Shek, E.I., and Vdovin, V. I., Sol.Stat. Phenom. 95-96 (2004) 283.Google Scholar
6. Lourenco, M. A., Siddiqui, M.S.A., Gwilliam, R. M., Shao, G., and Homewood, K. P., Physica E16 (2003) 376.Google Scholar