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Design And Fabrication Of Nitride Based High Power Devices

Published online by Cambridge University Press:  10 February 2011

Z. Z. Bandić ,
E.C. Piquette ,
P.M. Bridger ,
T.F. Kuech  and
T. C. Mcgill
Z. Z. Bandić
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
E.C. Piquette
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
P.M. Bridger
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI
T. C. Mcgill
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
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Abstract

We modeled the breakdown voltage, critical current density and maximum operating frequency of several GaN and GaN/AlN based high power and high temperature electronic devices. Important model parameters which influence device design and performance are minority carrier recombination lifetime and critical field for electric breakdown.

GaN Schottky devices have been fabricated in the planar geometry. Current-voltage measurements indicated the importance of the vertical geometry for achieving large breakdown voltages. The minority carrier (hole) recombination lifetimes have been measured by electron beam induced currents (EBIC). The measured hole lifetime of 7 ns and estimate for the critical field indicate the possibility of GaN/AlGaN thyristor switch devices operating at 5KV with current densities approximately equal to 200 A/cm2 and at frequencies above 2MHz.

The GaN structural and optical materials quality and processing requirement for etching is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 399
Copyright
Copyright © Materials Research Society 1998

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References

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