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Design and Fabrication of Graded Bandgap Solar Cells in Amorphous Si and Alloys

Published online by Cambridge University Press:  01 January 1993

Vikram L. Dalal  and
Greg Baldwin
Vikram L. Dalal
Affiliation:
Iowa State University , Dept. of Electrical and Computer Engr. Ames,Iowa 50011
Greg Baldwin
Affiliation:
Iowa State University , Dept. of Electrical and Computer Engr. Ames,Iowa 50011
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Abstract

In this paper, we discuss the appropriate design conditions and fabrication technology for graded bandgap solar cells in a-Si:H and a-(Si,Ge):H. In particular, we show that by carefully designing the buffer layers and the placement of the graded gap in the i layer of a p-i-n cell, one can fabricate a-Si:H solar cells which are more stable than standard design solar cells. Similarly, appropriate considerations of device physics and electric field profiles in devices made from a-(Si,Ge):H alloys can result in high performance a-(Si,Ge):H cells . We also show that using significant H dilution during growth of a-(Si,Ge):H layers and cells results in both films and devices of high quality and reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 833
Copyright
Copyright © Materials Research Society 1993

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References

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