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Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850nm

Published online by Cambridge University Press:  11 February 2011

Chichang Zhang  and
Aris Christou
Chichang Zhang
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Maryland at College Park, College Park, Maryland, 20742, USA
Aris Christou
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Maryland at College Park, College Park, Maryland, 20742, USA
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Abstract

Based on the AlxGa1-xAs/GaAs system and with graded Distributed Bragg mirrors (DBRs), a VCSEL for operation at 850–860nm is reported. The graded transition bands inside the DBRs were designed in order to achieve the tradeoff between the number of DBR layers and the low threshold current of the laser. The structure optimized had 39 pairs in the n-DBR stack and a low threshold current of 1.6mA was achieved. The device was fabricated with MBE growth, oxide confinement and RIE for MESA definition. The experimental results and physical characterization of the device are also reported to fully understand the VCSEL performance. The threshold current and other parameters predicted by the simulation are in good agreement with experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.44
Copyright
Copyright © Materials Research Society 2003

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References

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