Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T08:21:13.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Depth-Sensitive Strain Analysis of a W/Ta/W Trilayer

Published online by Cambridge University Press:  10 February 2011

S. G. Malhotra ,
Z. U. Rek ,
S. M. Yalisove  and
J. C. Bilello
S. G. Malhotra
Affiliation:
IBM Semiconductor Research & Development Ctr., 1580 Rte 52, Hopewell Junction, NY 12533
Z. U. Rek
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94395
S. M. Yalisove
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Michigan, Ann Arbor, MI 48109-2136
J. C. Bilello
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94395
Get access

Abstract

The high-resolution x-ray diffraction technique was used to determine the entire strain tensor as a function of x-ray penetration depth in a 400 nm W/Ta/W trilayer, which consisted of 150 nm W, 100 nm Ta, and 150 nm W. The strain tensor was calculated in a laboratory reference frame to determine the variation of in-plane strains, εxx, and εyy, and the normal strain εzz as a function of x-ray penetration depth. Two different methods were then used to determine the strains εxx, εyy, and εzz in each layer of trilayer, and both indicated that the strain states in the W layers were fe same, and that the strains εxx and εyy. in the W and Ta layer were the same magnitude. The difference between the Ta and W arose witK the normal strain, εzz, and was due to a Poisson contraction effect. The average residual stresses in the trilayer were determined with the HRXRD data, and also with sin2ψ and a substrate curvature technique, double-crystal diffraction topography. All three techniques indicated that the average biaxial stress in the trilayer was ∼1.0 GPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 379
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Davidenkov, N.N., Soviet Physics - Solid State, 2 (1961) 2595.Google Scholar
[2] Windischmann, H., Crit. Rev. Solid State Mater. Sci., 17 (1992) 547.Google Scholar
[3] Marra, W.C., Eisenberger, P., and Cho, A.Y., J. Appl. Phys., 50 (1979) 6927.Google Scholar
[4] Eisenberger, P. and Marra, W.C., Phys. Rev. Lett., 46 (1981) 1081.Google Scholar
[5] Fouss, P.H. and Brennan, S., Ann. Rev. of Mat. Sci., 20 (1990) 365.Google Scholar
[6] Bain, J.A. and Chyung, L.J., Brennan, S., and Clemens, B.M., Phys. Rev. B, 44 (1991) 1184.Google Scholar
[7] Malhotra, S.G., Rek, Z.U., Yalisove, S.M., and Bilello, J.C., J. Appl.Phys., 79 (1996) 6872.Google Scholar
[8] Clevenger, L.A., Mutscheller, A., Harper, J.M.E., Cabral, C. Jr., and Barmak, K., J. Appl. Phys., 72 (1992) 4918.Google Scholar
[9] Parfitt, L.J., Karpenko, O.P., Rek, Z.U., Yalisove, S.M., and Bilello, J.C., in Gerberich, W.W., Gao, H., Sundgren, J., and Baker, S.P. (eds.) Thin Films: Stresses and Mechanical Properties VI, MRS, Pittsburgh, PA, 1996.Google Scholar
[10] Parratt, L.G., Physical Review, 95 (1954) 359.Google Scholar
[11] Noyan, I.C. and Cohen, J.B., Residual Stress Measurement by Diffraction and Interpretation, Springer, New York, 1987, pp. 117–163.Google Scholar
[12] Tao, J., Lee, L.H., and Bilello, J.C., J. Elect. Mat., 20 (1991) 819.Google Scholar
[13] Imura, T., Weissmann, S., and Slade, J.J. Jr., Acta. Cryst., 15 (1962) 786.Google Scholar
[14] Nye, J.F., Physical Properties of Crystals, Oxford Univeristy Press, 1985.Google Scholar