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Depth-Sensitive Strain Analysis of a W/Ta/W Trilayer
Published online by Cambridge University Press: 10 February 2011
Abstract
The high-resolution x-ray diffraction technique was used to determine the entire strain tensor as a function of x-ray penetration depth in a 400 nm W/Ta/W trilayer, which consisted of 150 nm W, 100 nm Ta, and 150 nm W. The strain tensor was calculated in a laboratory reference frame to determine the variation of in-plane strains, εxx, and εyy, and the normal strain εzz as a function of x-ray penetration depth. Two different methods were then used to determine the strains εxx, εyy, and εzz in each layer of trilayer, and both indicated that the strain states in the W layers were fe same, and that the strains εxx and εyy. in the W and Ta layer were the same magnitude. The difference between the Ta and W arose witK the normal strain, εzz, and was due to a Poisson contraction effect. The average residual stresses in the trilayer were determined with the HRXRD data, and also with sin2ψ and a substrate curvature technique, double-crystal diffraction topography. All three techniques indicated that the average biaxial stress in the trilayer was ∼1.0 GPa.
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- Copyright © Materials Research Society 1997